Towards femtosecond laser ablation ionization mass spectrometric approaches for chemical depth-profiling analysis of lead-free Sn solder bumps with minimized side-wall contributions

Cedeño López, A.; Grimaudo, V.; Moreno-García, P.; Riedo, Andreas; Tulej, Marek; Wiesendanger, R.; Wurz, Peter; Broekmann, Peter (2018). Towards femtosecond laser ablation ionization mass spectrometric approaches for chemical depth-profiling analysis of lead-free Sn solder bumps with minimized side-wall contributions. Journal of analytical atomic spectrometry, 33(2), pp. 283-293. Royal Society of Chemistry 10.1039/c7ja00295e

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Sn solder bumps on Cu pillars and the quantification of incorporated organic impurities are of urgent interest to the microchip industry. In this report, the fundamentals of laser–matter interaction using femtosecond laser ablation ionization mass spectrometry (fs-LIMS) are described, including studies on the ablation rate of a dual layer system Sn/Cu as well as on three different laser ablation approaches that (i) address the highly different material properties of Sn and Cu and (ii) allow for a significant reduction of side-wall contributions, which is a crucial prerequisite for chemical depth profiling.

Item Type:

Journal Article (Original Article)

Division/Institute:

08 Faculty of Science > Physics Institute > Space Research and Planetary Sciences
08 Faculty of Science > Departement of Chemistry and Biochemistry
08 Faculty of Science > Physics Institute

UniBE Contributor:

Riedo, Andreas; Tulej, Marek; Wurz, Peter and Broekmann, Peter

Subjects:

500 Science > 570 Life sciences; biology
500 Science > 540 Chemistry
500 Science > 520 Astronomy
600 Technology > 620 Engineering
500 Science > 530 Physics

ISSN:

0267-9477

Publisher:

Royal Society of Chemistry

Language:

English

Submitter:

Dora Ursula Zimmerer

Date Deposited:

28 Mar 2018 10:48

Last Modified:

28 Mar 2018 10:48

Publisher DOI:

10.1039/c7ja00295e

BORIS DOI:

10.7892/boris.112879

URI:

https://boris.unibe.ch/id/eprint/112879

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