Designing Strained Interface Heterostructures for Memristive Devices

Schweiger, Sebastian; Pfenninger, Reto; Bowman, William J.; Aschauer, Ulrich Johannes; Rupp, Jennifer L. M. (2017). Designing Strained Interface Heterostructures for Memristive Devices. Advanced materials, 29(15), p. 1605049. Wiley-VCH 10.1002/adma.201605049

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Ionic heterostructures are used as a strain-modulated memristive device based on the model system Gd0.1Ce0.9O2−δ/Er2O3 to set and tune the property of “memristance.” The modulation of interfacial strain and the interface count is used to engineer the Roff/Ron ratio and the persistence of the system. A model describing the variation of mixed ionic–electronic mobilities and defect concentrations is presented.

Item Type:

Journal Article (Original Article)

Division/Institute:

08 Faculty of Science > Departement of Chemistry and Biochemistry

UniBE Contributor:

Aschauer, Ulrich Johannes

Subjects:

500 Science > 570 Life sciences; biology
500 Science > 540 Chemistry
500 Science > 530 Physics
600 Technology > 620 Engineering

ISSN:

0935-9648

Publisher:

Wiley-VCH

Language:

English

Submitter:

Ulrich Johannes Aschauer

Date Deposited:

08 Jun 2017 12:24

Last Modified:

09 Jun 2017 07:49

Publisher DOI:

10.1002/adma.201605049

BORIS DOI:

10.7892/boris.96123

URI:

https://boris.unibe.ch/id/eprint/96123

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