Schweiger, Sebastian; Pfenninger, Reto; Bowman, William J.; Aschauer, Ulrich Johannes; Rupp, Jennifer L. M. (2017). Designing Strained Interface Heterostructures for Memristive Devices. Advanced materials, 29(15), p. 1605049. Wiley-VCH 10.1002/adma.201605049
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Ionic heterostructures are used as a strain-modulated memristive device based on the model system Gd0.1Ce0.9O2−δ/Er2O3 to set and tune the property of “memristance.” The modulation of interfacial strain and the interface count is used to engineer the Roff/Ron ratio and the persistence of the system. A model describing the variation of mixed ionic–electronic mobilities and defect concentrations is presented.
Item Type: |
Journal Article (Original Article) |
---|---|
Division/Institute: |
08 Faculty of Science > Department of Chemistry, Biochemistry and Pharmaceutical Sciences (DCBP) |
UniBE Contributor: |
Aschauer, Ulrich Johannes |
Subjects: |
500 Science > 570 Life sciences; biology 500 Science > 540 Chemistry 500 Science > 530 Physics 600 Technology > 620 Engineering |
ISSN: |
0935-9648 |
Publisher: |
Wiley-VCH |
Language: |
English |
Submitter: |
Ulrich Johannes Aschauer |
Date Deposited: |
08 Jun 2017 12:24 |
Last Modified: |
05 Dec 2022 15:03 |
Publisher DOI: |
10.1002/adma.201605049 |
BORIS DOI: |
10.7892/boris.96123 |
URI: |
https://boris.unibe.ch/id/eprint/96123 |