Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors

El Abbassi, Maria; Perrin, Mickael L.; Barin, Gabriela Borin; Sangtarash, Sara; Overbeck, Jan; Braun, Oliver; Lambert, Colin J.; Sun, Qiang; Prechtl, Thorsten; Narita, Akimitsu; Müllen, Klaus; Ruffieux, Pascal; Sadeghi, Hatef; Fasel, Roman; Calame, Michel (2020). Controlled Quantum Dot Formation in Atomically Engineered Graphene Nanoribbon Field-Effect Transistors. ACS nano, 14(5), pp. 5754-5762. American Chemical Society 10.1021/acsnano.0c00604

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Graphene nanoribbons (GNRs) have attracted strong interest from researchers worldwide, as they constitute an emerging class of quantum-designed materials. The major challenges toward their exploitation in electronic applications include reliable contacting, complicated by their small size (<50 nm), and the preservation of their physical properties upon device integration. In this combined experimental and theoretical study, we report on the quantum dot behavior of atomically precise GNRs integrated in a device geometry. The devices consist of a film of aligned five-atom-wide GNRs (5-AGNRs) transferred onto graphene electrodes with a sub 5 nm nanogap. We demonstrate that these narrow-bandgap 5-AGNRs exhibit metal-like behavior at room temperature and single-electron transistor behavior for temperatures below 150 K. By performing spectroscopy of the molecular levels at 13 K, we obtain addition energies in the range of 200-300 meV. DFT calculations predict comparable addition energies and reveal the presence of two electronic states within the bandgap of infinite ribbons when the finite length of the 5-AGNR is accounted for. By demonstrating the preservation of the 5-AGNRs' molecular levels upon device integration, as demonstrated by transport spectroscopy, our study provides a critical step forward in the realization of more exotic GNR-based nanoelectronic devices.

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